Dab tsi yog qhov feem ntau siv etching gases hauv qhuav etching?

Qhuav etching tshuab yog ib qho ntawm cov txheej txheem tseem ceeb. Qhuav etching gas yog ib yam khoom tseem ceeb nyob rau hauv semiconductor manufacturing thiab ib qho tseem ceeb roj qhov chaw rau plasma etching. Nws qhov kev ua tau zoo cuam tshuam ncaj qha rau qhov zoo thiab kev ua haujlwm ntawm cov khoom kawg. Kab lus no feem ntau qhia txog dab tsi yog cov khoom siv feem ntau siv hauv cov txheej txheem qhuav etching.

Fluorine-based gases: xws liCov pa roj carbon tetrafluoride (CF4), hexafluoroethane (C2F6), trifluoromethane (CHF3) thiab perfluoropropane (C3F8). Cov pa roj no tuaj yeem tsim cov fluorides tsis zoo thaum etching silicon thiab silicon tebchaw, yog li ua tiav cov khoom tshem tawm.

chlorine-based gases: xws li chlorine (Cl2),boron trichloride (BCl3)thiab silicon tetrachloride (SiCl4). chlorine-based gases tuaj yeem muab cov tshuaj chloride ions thaum lub sij hawm etching, uas yuav pab txhim kho tus nqi etching thiab xaiv.

Bromine-based gases: xws li bromine (Br2) thiab bromine iodide (IBr). Bromine-based gases tuaj yeem muab kev ua haujlwm zoo dua qub hauv qee cov txheej txheem etching, tshwj xeeb tshaj yog thaum etching cov ntaub ntawv nyuaj xws li silicon carbide.

Nitrogen-based thiab oxygen-based gases: xws li nitrogen trifluoride (NF3) thiab oxygen (O2). Cov pa roj no feem ntau yog siv los kho cov kev mob tshwm sim hauv cov txheej txheem etching los txhim kho cov kev xaiv thiab kev taw qhia ntawm etching.

Cov pa roj no ua tiav qhov etching ntawm cov khoom nto los ntawm kev sib xyaw ntawm lub cev sputtering thiab tshuaj lom neeg thaum lub sij hawm plasma etching. Qhov kev xaiv ntawm etching gas nyob ntawm seb hom khoom yuav tsum tau etched, xaiv qhov yuav tsum tau ntawm etching, thiab qhov xav tau etching tus nqi.