Dab tsi yog cov nquag siv etching gases hauv qhuav etching?

Kev siv tshuab qhuav etching yog ib qho ntawm cov txheej txheem tseem ceeb. Qhuav etching roj yog cov khoom tseem ceeb hauv semiconductor kev tsim khoom thiab qhov tseem ceeb ntawm cov roj av rau ntshav etching. Nws cov kev ua tau zoo cuam tshuam rau qhov zoo thiab kev ua tau zoo ntawm cov khoom kawg. Kab lus no tsuas yog qhia txog dab tsi yog cov siv hluav taws xob ib txwm siv etching hauv cov txheej txheem etching qhuav.

Fluorine-based gases: xws liCov pa roj carbon tetraflide (cf4), Hexafluoroethane (C2F6), trifluoromethane (chf3) thiab perfluoropnane (c3f8). Cov pa roj no tuaj yeem tsim cov tshuaj tua kab zoo thaum etching silicon thiab silicon tebchaw, yog li ua tiav cov khoom tshem tawm.

Tshuaj chlorine-basible roj av: xws li chlorine (CL2),Boron Trichhloride (BCl3)Thiab Silicon Tetrachloride (Sicl4). Cov tshuaj chlorine-based tuaj yeem muab cov tshuaj chloride tuaj yeem muab cov tshuaj chloride tuaj yeem muab cov txheej txheem etching, uas pab txhawm rau txhim kho qhov etching tus nqi thiab xaiv.

Bromine-raws roj av: xws li bromine (br2) thiab bromine iodide (ibr). Bromine-based gases tuaj yeem muab tau zoo dua qub etching hauv qee cov txheej txheem etching, tshwj xeeb tshaj yog thaum etching cov ntaub ntawv nyuaj xws li silicon carbide.

Nitrogen-based thiab oxygen gases: xws li nitrogen trifluoride (NF3) thiab cov pa (O2). Cov pa roj no feem ntau yog siv los kho cov tshuaj tiv thaiv kab mob hauv cov txheej txheem etching los txhim kho kev xaiv thiab kev coj ntawm kev etching.

Cov roj av no ua tiav cov khoom siv ntawm cov khoom saum npoo av los ntawm kev sib xyaw ua ke ntawm kev sib xyaw ua ke ntawm lub cev thiab tshuaj lom neeg thaum lub plasma etching. Qhov kev xaiv ntawm etching roj nyob ntawm seb cov khoom siv los ua etched, qhov xav tau ntawm kev etching, thiab qhov xav tau etching tus nqi.