Lub luag haujlwm ntawm cov sulfur hexafluoride hauv silicon nitride etching

Sulphur hexafluoride yog roj nrog cov tshuaj insulating zoo thiab feem ntau siv nyob rau hauv high-voltage cov kab, ntxiv rau cov kev hloov hluav taws xob, cov kev hloov pauv ntawm cov neeg siv hluav taws xob kuj tseem tuaj yeem siv hluav taws xob hauv hluav taws xob. Kev Siv Hluav Taws Xob Hluav Taws Xob Kub Siab-Purity Sulfur Hexafluoride yog ib qho zoo tagnrho hluav taws xob Etchant, uas yog dav siv nyob rau hauv lub tshav pob ntawm microelectronics technology. Niaj hnub no, NIU RAWE GASTAG Editor Yueyue yuav qhia txog Sulphur Hexafluoride hauv Silicon Nitride etching thiab cawv ntawm cov tsis sib xws.

Peb sib tham txog SF6 ntshav etching sawlaiv npaum li cas, cov roj radiation tshuaj tiv thaiv ntawm txhua hom ntawm SF6 / nws, SF6 ntshav thiab SF6 kev sib cais Tus nqi, thiab tshawb txog kev sib raug zoo ntawm kev hloov ntawm Sinx etching tus nqi thiab cov hom ntshav ntawm cov ntshav siab.

Cov kev tshawb fawb pom tau tias thaum lub zog ntshav hluav taws xob tau nce, ua kom muaj kev nce ntxiv; Yog tias tus nqi txaus ntawm SF6 hauv cov ntshav yog nce, f attrenfering nce thiab yog qhov sib txheeb zoo nrog cov lej etching. Tsis tas li ntawd, tom qab ntxiv cationic roj o2 nyob rau hauv qhov chaw ruaj khov, thiab muaj kev sib cais ntawm cov kev sib cais, thiab cov kev sib cais ntawm lub sijhawm no ntau dua thaum O2 tsis ntxiv. (2) Thaum O2 / SF6 ntws piv yog ntau dua 0.2 mus rau lub sijhawm ncua sijhawm ntawm SF6 los ua foms, etching tus nqi yog qhov siab tshaj plaws; Tab sis tib lub sijhawm, cov oms at the plasma kuj yooj yim rau cov siox lossis ntau dua o at this woms yuav yog rau qhov etching cov tshuaj tiv thaiv. Yog li ntawd, qhov etching tus nqi pib kom qeeb thaum O2 / SF6 piv yog ze rau 1. (3) Thaum O2 / SF6 tus piv yog ntau dua 1, qhov kev nce qib qis dua 1, qhov etching tus nqi txo. Vim tias qhov nce loj hauv O2, tus dissociated f atoms sib tsoo nrog O2 thiab daim ntawv ntawm, uas txo qhov kev xav ntawm F atoms, uas ua rau muaj kev txo qis hauv tus nqi etching. Nws tuaj yeem pom los ntawm qhov no uas thaum O2 tau ntxiv, cov txaus piv ntawm O2 / SF6 yog nyob nruab nrab ntawm 0.2 thiab 0.8, thiab qhov zoo tshaj plaws etching tus nqi tuaj yeem tau txais.