Lub luag haujlwm ntawm sulfur hexafluoride hauv silicon nitride etching

Sulfur hexafluoride yog ib qho roj uas muaj cov khoom zoo heev thiab feem ntau siv rau hauv cov hluav taws xob siab arc extinguishing thiab transformers, high-voltage kis kab, transformers, thiab lwm yam. Txawm li cas los xij, ntxiv rau cov haujlwm no, sulfur hexafluoride kuj tseem siv tau ua cov khoom siv hluav taws xob etchant. Hluav taws xob qib siab purity sulfur hexafluoride yog ib qho khoom siv hluav taws xob zoo tagnrho, uas yog siv dav hauv kev siv tshuab microelectronics. Niaj hnub no, Niu Ruide tus kws kho roj tshwj xeeb Yueyue yuav qhia txog kev siv sulfur hexafluoride hauv silicon nitride etching thiab kev cuam tshuam ntawm ntau yam kev teeb tsa.

Peb tham txog cov txheej txheem SF6 plasma etching SiNx, suav nrog kev hloov pauv lub zog plasma, qhov piv ntawm cov roj ntawm SF6/He thiab ntxiv cov roj cationic O2, tham txog nws qhov cuam tshuam rau qhov nrawm ntawm SiNx element tiv thaiv txheej ntawm TFT, thiab siv plasma radiation. Lub spectrometer tshuaj xyuas qhov kev hloov pauv ntawm txhua hom tsiaj hauv SF6/He, SF6/He/O2 plasma thiab qhov nrawm ntawm SF6 dissociation, thiab tshawb nrhiav kev sib raug zoo ntawm qhov kev hloov pauv ntawm SiNx etching rate thiab qhov concentration ntawm cov hom tsiaj plasma.

Cov kev tshawb fawb tau pom tias thaum lub zog plasma nce ntxiv, qhov nrawm ntawm etching nce ntxiv; yog tias qhov nrawm ntawm SF6 hauv plasma nce ntxiv, qhov concentration ntawm F atom nce ntxiv thiab muaj feem cuam tshuam zoo nrog qhov nrawm ntawm etching. Tsis tas li ntawd, tom qab ntxiv cov roj cationic O2 nyob rau hauv qhov nrawm tag nrho, nws yuav muaj qhov cuam tshuam ntawm kev nce qhov nrawm ntawm etching, tab sis nyob rau hauv qhov sib txawv ntawm O2 / SF6 ntws piv, yuav muaj cov txheej txheem sib txawv, uas tuaj yeem faib ua peb ntu: (1) Qhov nrawm ntawm O2 / SF6 yog me me heev, O2 tuaj yeem pab qhov kev sib cais ntawm SF6, thiab qhov nrawm ntawm lub sijhawm no yog ntau dua li thaum O2 tsis ntxiv. (2) Thaum qhov nrawm ntawm O2 / SF6 ntau dua 0.2 rau lub sijhawm ze li ntawm 1, lub sijhawm no, vim muaj ntau qhov kev sib cais ntawm SF6 los tsim cov atoms F, qhov nrawm ntawm etching yog qhov siab tshaj plaws; tab sis tib lub sijhawm, cov O atoms hauv plasma kuj nce ntxiv thiab Nws yooj yim los tsim SiOx lossis SiNxO (yx) nrog SiNx zaj duab xis nto, thiab ntau O atoms nce ntxiv, qhov nyuaj dua F atoms yuav rau qhov kev cuam tshuam etching. Yog li ntawd, qhov nrawm etching pib qeeb thaum O2 / SF6 piv ze rau 1. (3) Thaum O2 / SF6 piv ntau dua 1, qhov nrawm etching txo qis. Vim yog qhov nce loj hauv O2, cov F atoms sib cais sib tsoo nrog O2 thiab daim ntawv OF, uas txo qhov concentration ntawm F atoms, ua rau qhov nrawm etching txo qis. Nws tuaj yeem pom los ntawm qhov no tias thaum O2 ntxiv, qhov nrawm ntawm O2 / SF6 yog ntawm 0.2 thiab 0.8, thiab qhov nrawm etching zoo tshaj plaws tuaj yeem tau txais.