Sulfur hexafluoride yog cov roj uas muaj cov khoom siv insulating zoo heev thiab feem ntau siv rau hauv high-voltage arc extinguishing thiab transformers, high-voltage transmissions, transformers, thiab lwm yam. Txawm li cas los xij, ntxiv rau cov haujlwm no, sulfur hexafluoride kuj tseem siv tau los ua hluav taws xob etchant. .Electronic qib high-purity sulfur hexafluoride yog cov khoom siv hluav taws xob zoo tshaj plaws, uas yog siv dav hauv kev siv tshuab microelectronics.Niaj hnub no, Niu Ruide tshwj xeeb roj editor Yueyue yuav qhia txog daim ntawv thov ntawm sulfur hexafluoride hauv silicon nitride etching thiab cuam tshuam ntawm qhov sib txawv.
Peb tham txog SF6 plasma etching SiNx txheej txheem, suav nrog kev hloov cov ntshav plasma, cov roj piv ntawm SF6 / Nws thiab ntxiv cov roj cationic O2, sib tham txog nws cov kev cuam tshuam ntawm etching tus nqi ntawm SiNx element tiv thaiv txheej ntawm TFT, thiab siv plasma radiation. spectrometer txheeb xyuas qhov kev hloov pauv ntawm txhua hom hauv SF6 / Nws, SF6 / He / O2 plasma thiab SF6 dissociation tus nqi, thiab tshawb nrhiav kev sib raug zoo ntawm kev hloov pauv ntawm SiNx etching tus nqi thiab hom ntshav ntshav concentration.
Cov kev tshawb fawb tau pom tias thaum lub zog plasma nce, qhov etching tus nqi nce;Yog hais tias tus nqi ntawm SF6 nyob rau hauv cov ntshav yog nce, F atom concentration nce thiab yog zoo correlated nrog tus nqi etching.Tsis tas li ntawd, tom qab ntxiv cov roj cationic O2 nyob rau hauv qhov ruaj khov tag nrho cov nqi ntws, nws yuav muaj cov txiaj ntsig ntawm kev nce tus nqi etching, tab sis nyob rau hauv qhov sib txawv O2 / SF6 flow ratios, yuav muaj ntau yam tshuaj tiv thaiv, uas tuaj yeem muab faib ua peb ntu. : (1) O2 / SF6 ntws piv yog me me, O2 tuaj yeem pab cuam tshuam ntawm SF6, thiab qhov etching tus nqi ntawm lub sijhawm no ntau dua thaum O2 tsis ntxiv.(2) Thaum O2 / SF6 ntws piv ntau dua 0.2 mus rau lub caij nyoog nce mus txog 1, lub sijhawm no, vim qhov loj ntawm kev sib cais ntawm SF6 los ua F atoms, etching tus nqi yog siab tshaj;Tab sis tib lub sijhawm, O atoms hauv plasma kuj nce ntxiv thiab Nws yooj yim rau tsim SiOx lossis SiNxO (yx) nrog SiNx zaj duab xis nto, thiab ntau O atoms nce, qhov nyuaj F atoms yuav yog rau cov etching cov tshuaj tiv thaiv.Yog li ntawd, tus nqi etching pib qeeb thaum O2 / SF6 piv yog ze rau 1. (3) Thaum O2 / SF6 piv yog ntau dua 1, qhov etching tus nqi txo.Vim yog qhov loj ntawm O2, cov dissociated F atoms sib tsoo nrog O2 thiab daim ntawv OF, uas txo cov concentration ntawm F atoms, uas ua rau txo tus nqi ntawm etching.Nws tuaj yeem pom los ntawm qhov no tias thaum O2 ntxiv, qhov sib piv ntawm O2 / SF6 yog nyob nruab nrab ntawm 0.2 thiab 0.8, thiab qhov zoo tshaj plaws etching tus nqi tuaj yeem tau txais.
Post lub sij hawm: Dec-06-2021
